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APTC60SKM35T1G Datasheet(PDF) 4 Page - Microsemi Corporation |
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APTC60SKM35T1G Datasheet(HTML) 4 Page - Microsemi Corporation |
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4 / 6 page  APTC60SKM35T1G www.microsemi.com 4 – 6 Typical Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 4V 4.5V 5V 5.5V 6V 6.5V 0 40 80 120 160 200 240 280 320 360 400 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) VGS=15&10V Low Voltage Output Characteristics Transfert Characteristics TJ=25°C TJ=125°C 0 40 80 120 160 200 240 280 01 23 4 5 67 VGS, Gate to Source Voltage (V) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.9 0.95 1 1.05 1.1 0 20 40 60 80 100 120 ID, Drain Current (A) Normalized to VGS=10V @ 36A 0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 TC, Case Temperature (°C) DC Drain Current vs Case Temperature |
Similar Part No. - APTC60SKM35T1G |
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Similar Description - APTC60SKM35T1G |
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