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APTGF15H120T1G Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTGF15H120T1G Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 6 page  APTGF15H120T1G www.microsemi.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 250 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V Tj = 125°C 500 µA Tj = 25°C 2.5 3.2 3.7 VCE(sat) Collector Emitter Saturation Voltage VGE =15V IC = 15A Tj = 125°C 4.0 V VGE(th) Gate Threshold Voltage VGE = VCE, IC = 1mA 4 6 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 1000 Coes Output Capacitance 150 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 70 pF Qg Total gate Charge 99 Qge Gate – Emitter Charge 10 Qgc Gate – Collector Charge VGE = 15V VBus = 600V IC =15A 70 nC Td(on) Turn-on Delay Time 60 Tr Rise Time 50 Td(off) Turn-off Delay Time 315 Tf Fall Time Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 15A RG = 33Ω 30 ns Td(on) Turn-on Delay Time 60 Tr Rise Time 50 Td(off) Turn-off Delay Time 356 Tf Fall Time Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 15A RG = 33Ω 40 ns Eon Turn-on Switching Energy Tj = 125°C 2 Eoff Turn-off Switching Energy VGE = 15V VBus = 600V IC = 15A RG = 33Ω Tj = 125°C 1 mJ Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 100 IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 500 µA IF DC Forward Current Tc = 80°C 15 A IF = 15A 2.8 3.3 IF = 30A 3.4 VF Diode Forward Voltage IF = 15A Tj = 125°C 2.4 V Tj = 25°C 240 trr Reverse Recovery Time Tj = 125°C 290 ns Tj = 25°C 260 Qrr Reverse Recovery Charge IF = 15A VR = 800V di/dt =200A/µs Tj = 125°C 960 nC |
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