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APTGF150A60T3AG Datasheet(PDF) 4 Page - Microsemi Corporation |
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APTGF150A60T3AG Datasheet(HTML) 4 Page - Microsemi Corporation |
4 / 5 page APTGF150A60T3AG www.microsemi.com 4 – 5 Typical Performance Curve Output Characteristics (VGE=15V) TJ=25°C TJ=125°C TJ=125°C 0 50 100 150 200 250 300 350 400 0 0.5 11.5 22.5 33.5 VCE (V) Output Characteristics VGE=15V VGE=12V VGE=20V VGE=9V 0 50 100 150 200 250 300 350 400 012 3 4 5 VCE (V) TJ = 125°C Transfert Characteristics TJ=25°C TJ=25°C TJ=125°C 0 50 100 150 200 250 300 350 400 5678 9 10 11 12 VGE (V) Energy losses vs Collector Current Eon Eoff 0 3 6 9 12 0 100 200 300 400 IC (A) VCE = 300V VGE = 15V RG = 1.5 Ω TJ = 125°C Eon Eoff 0 2.5 5 7.5 10 02 46 8 10 Gate Resistance (ohms) VCE = 300V VGE =15V IC = 200A TJ = 125°C Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 0 100 200 300 400 500 0 100 200 300 400 500 600 VCE (V) VGE=15V TJ=125°C RG=1.5 Ω maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.04 0.08 0.12 0.16 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) IGBT |
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