APTGT150DA120TG

www.microsemi.com

5 - 5

Forward Characteristic of diode

0

50

100

150

200

250

300

0

0.4

0.8

1.2

1.6

2

2.4

Hard

switching

ZCS

ZVS

0

10

20

30

40

50

60

0

40

80

120

160

200

240

D=50%

Operating Frequency vs Collector Current

maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.00001

0.0001

0.001

0.01

0.1

1

10

rectangular Pulse Duration (Seconds)

Diode

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