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APTGT200SK170D3G Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTGT200SK170D3G Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 5 page  APTGT200SK170D3G www.microsemi.com 2- 5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1700V 3 mA Tj = 25°C 2.0 2.5 VCE(on) Collector Emitter on Voltage VGE = 15V IC = 200A Tj = 125°C 2.4 V VGE(th) Gate Threshold Voltage VGE = VCE , IC = 8 mA 5.2 5.8 6.4 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 18 Cres Reverse Transfer Capacitance VGE = 0V, VCE = 25V f = 1MHz 0.6 nF QG Gate charge VGE=±15V, IC=200A VCE=900V 2.3 µC Td(on) Turn-on Delay Time 280 Tr Rise Time 80 Td(off) Turn-off Delay Time 850 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 200A RG = 6.8Ω 120 ns Td(on) Turn-on Delay Time 300 Tr Rise Time 100 Td(off) Turn-off Delay Time 1000 Tf Fall Time Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 200A RG = 6.8Ω 200 ns Tj = 25°C 58 Eon Turn On Energy Tj = 125°C 78 Tj = 25°C 43 Eoff Turn Off Energy VGE = ±15V VBus = 900V IC = 200A RG = 6.8Ω Tj = 125°C 63 mJ Isc Short Circuit data VGE ≤15V ; VBus = 1000V tp ≤ 10µs ; Tj = 125°C 800 A Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1700 V Tj = 25°C 750 IRRM Maximum Reverse Leakage Current VR=1700V Tj = 125°C 1000 µA IF DC Forward Current Tc = 80°C 200 A Tj = 25°C 1.8 2.2 VF Diode Forward Voltage IF = 200A Tj = 125°C 1.9 V Tj = 25°C 385 trr Reverse Recovery Time Tj = 125°C 490 ns Tj = 25°C 56 Qrr Reverse Recovery Charge Tj = 125°C 92 µC Tj = 25°C 24 Err Reverse Recovery Energy IF = 200A VR = 900V di/dt =3200A/µs Tj = 125°C 48 mJ |
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