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APTGV30H60T3G Datasheet(PDF) 7 Page - Microsemi Corporation

Part # APTGV30H60T3G
Description  Full - Bridge NPT & Trench Field Stop짰 IGBT Power module
Download  9 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGV30H60T3G Datasheet(HTML) 7 Page - Microsemi Corporation

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APTGV30H60T3G
www.microsemi.com
7-9
7. Bottom switches curves
7.1 Bottom fast NPT IGBT typical performance curves
Output characteristics (VGE=15V)
TJ=-55°C
TJ=25°C
TJ=125°C
0
30
60
90
120
01
234
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
25
50
75
100
01234
56789
10
VGE, Gate to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Ic=60A
Ic=30A
Ic=15A
0
1
2
3
4
5
6
7
8
6
8
10
12
14
16
VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
Ic=60A
Ic=30A
Ic=15A
0
0.5
1
1.5
2
2.5
3
3.5
4
-50
-25
0
25
50
75
100
125
TJ, Junction Temperature (°C)
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.70
0.80
0.90
1.00
1.10
1.20
-50
-25
0
25
50
75
100 125
TJ, Junction Temperature (°C)
Breakdown Voltage vs Junction Temp.
0
10
20
30
40
50
60
-50 -25
0
255075 100 125 150
TC, Case Temperature (°C)
DC Collector Current vs Case Temperature
Gate Charge
VCE=120V
VCE=300V
VCE=480V
0
2
4
6
8
10
12
14
16
18
0
204060
80
100
120
Gate Charge (nC)
IC = 30A
TJ = 25°C
Output Characteristics (VGE=10V)
TJ=-55°C
TJ=25°C
TJ=125°C
0
25
50
75
100
01
234
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle


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