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APTGV30H60T3G Datasheet(PDF) 1 Page - Microsemi Corporation

Part # APTGV30H60T3G
Description  Full - Bridge NPT & Trench Field Stop짰 IGBT Power module
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGV30H60T3G Datasheet(HTML) 1 Page - Microsemi Corporation

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APTGV30H60T3G
www.microsemi.com
1-9
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Q3
11
10
Q1
CR1
7
22
13 14
CR3
3
30
29
32
18
19
23
8
15
31
R1
16
4
CR4
CR2
Q2
Q4
26
27
Top switches : Trench + Field Stop IGBT®
Bottom switches : FAST NPT IGBT
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
13/14 ; 15/16 ; 26/27 ; 31/32
Trench & Field Stop® IGBT Q1, Q3:
VCES = 600V ; IC = 30A @ Tc = 80°C
Fast NPT IGBT Q2, Q4:
VCES = 600V ; IC = 30A @ Tc = 80°C
Application
• Solar converter
Features
• Q2, Q4 FAST Non Punch Through (NPT) IGBT
- Switching frequency up to 100 kHz
- RBSOA & SCSOA rated
- Low tail current
• Q1, Q3 Trench & Field Stop IGBT®
- Low voltage drop
- Switching frequency up to 20 kHz
- RBSOA & SCSOA rated
- Low tail current
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Optimized conduction & switching losses
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Full - Bridge
NPT & Trench + Field Stop® IGBT
Power module


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