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APTGV50H120T3G Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTGV50H120T3G Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 9 page  APTGV50H120T3G www.microsemi.com 2-9 All ratings @ Tj = 25°C unless otherwise specified 1. Top switches 1.1 Top Trench + Field Stop IGBT® characteristics Absolute maximum ratings Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 V TC = 25°C 75 IC Continuous Collector Current TC = 80°C 50 ICM Pulsed Collector Current TC = 25°C 100 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation TC = 25°C 270 W RBSOA Reverse Bias Safe Operating Area TJ = 125°C 100A @ 1150V Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 250 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V Tj = 125°C 500 µA Tj = 25°C 1.4 1.7 2.1 VCE(sat) Collector Emitter saturation Voltage VGE =15V IC = 50A Tj = 125°C 2.0 V VGE(th) Gate Threshold Voltage VGE = VCE , IC = 2mA 5.0 5.8 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 3600 Crss Reverse Transfer Capacitance VGE = 0V,VCE = 25V f = 1MHz 160 pF Td(on) Turn-on Delay Time 90 Tr Rise Time 30 Td(off) Turn-off Delay Time 420 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 50A RG = 18Ω 70 ns Td(on) Turn-on Delay Time 90 Tr Rise Time 50 Td(off) Turn-off Delay Time 520 Tf Fall Time Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 18Ω 90 ns Eon Turn-on Switching Energy Tj = 125°C 5 Eoff Turn-off Switching Energy VGE = ±15V VBus = 600V IC = 50A RG = 18Ω Tj = 125°C 5.5 mJ RthJC Junction to Case Thermal resistance 0.45 °C/W |
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