ARF301

125V, 300W, 45MHz

• High Performance

• High Voltage Breakdown and Large SOA

for Superior Ruggedness

• Low Thermal Resistance.

• Capacitance matched with ARF300 N-Channel

Symbol

Parameter

Ratings

Unit

V

DSS

Drain-Source Voltage

500

V

V

DGO

Drain-Gate Voltage

500

I

D

Continuous Drain Current @ T

20

A

V

GS

Gate-Source Voltage

±30

V

P

D

Total Power Dissipation @ T

833

W

T

Operating and Storage Junction Temperature Range

-55 to 175

°C

T

L

Lead Temperature: 0.063” from Case for 10 Sec.

300

Maximum Ratings

All Ratings: T

Static Electrical Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

BV

DSS

Drain-Source Breakdown Voltage (V

500

V

V

DS(ON)

8

10

I

DSS

Zero Gate Voltage Drain Current (V

25

μA

Zero Gate Voltage Drain Current (V

250

I

GSS

Gate-Source Leakage Current (V

±100

nA

g

fs

Forward Transconductance (V

5

8

mhos

V

GS(TH)

Gate Threshold Voltage (V

-2.5

- 4

-5

Volts

Microsemi Website - http://www.microsemi.com

CAUTION:

These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

RF POWER MOSFET

P-CHANNEL ENHANCEMENT MODE

• Specified 125 Volt, 27 MHz Characteristics:

Output Power = 300 Watts.

Gain = 15dB (Class E)

Efficiency = 80%

• RoHS Compliant

Symbol

Parameter

Min

Typ

Max

Unit

R

θJC

Junction to Case

0.15

°C/W

R

θJHS

0.27

Thermal Characteristics

The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package.

It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at

frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF

power transistor making the pair well suited for bridge configurations