MAXIMUM RATINGS

All Ratings: T

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

V

I

DSS

I

GSS

g

fs

V

isolation

V

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Forward Transconductance (V

Gate Threshold Voltage (V

MIN

TYP

MAX

500

6

7.5

100

1000

±400

6

7.5

TBD

3

5

UNIT

Volts

μA

nA

mhos

Volts

Symbol

V

DSS

I

D

V

GS

P

D

T

T

L

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Gate-Source Voltage

Total Device Dissipation @ T

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

ARF1500

500

60

±30

1500

-55 to 175

300

UNIT

Volts

Amps

Volts

Watts

°C

RF POWER MOSFET

N - CHANNEL ENHANCEMENT MODE

125V

750W

40MHz

The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial

RF power generator and amplifier applications up to 40 MHz.

• Specified 125 Volt, 27.12 MHz Characteristics:

•

Output Power = 750 Watts.

•

Gain = 17dB (Class C)

•

Efficiency > 75%

• High Performance Power RF Package.

• Very High Breakdown for Improved Ruggedness.

• Low Thermal Resistance.

• Nitride Passivated Die for Improved Reliability.

ARF1500

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θJHS

Characteristic (per package unless otherwise noted)

Junction to Case

MIN

TYP

MAX

0.10

0.16

UNIT

°C/W

Volts

DS

S

GS

S

ARF1500

BeO

1525-xx

SS

S

S

G

D

Microsemi Website - http://www.microsemi.com

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed

.

• RoHS Compliant