GC4310 – GC4375

Microsemi

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

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TM

®

Copyright

 2007

Rev: 2009-02-02

RoHS Compliant

CONTROL DEVICES

High Speed NIP Diodes

D E SCRI PTI ON

The GC4300 series are high speed (anode base) NIP diodes made with high

resistivity reverse epitaxial silicon material. These diodes are passivated with

silicon dioxide for high stability and reliability and have been proven by

thousands of device hours in high reliability systems.

The NIP diode is used when negative bias current is available for forward

conduction and will operate with as little as -10 mA bias. These diodes have

somewhat faster speeds as compared with similar PIN diodes.

These devices can withstand storage temperatures from -65°C to +200°C and

will operate over the range from -55°C to +150°C. All devices meet or exceed

military environmental specifications of MIL-PRF-19500.

This series of diodes meets RoHS requirements per EU Directive

2002/95/EC. The standard terminal finish is gold unless otherwise specified.

Consult the factory if you have special requirements.

APPLICATIONS/BENEFITS



RF / Microwave Switching



Duplexers



Digital Phase Shifting



Phased Array Radar

APPLICATIONS

The GC4300 series can be used in RF circuits as an on/off element, as a

switch, or as a current controlled resistor in attenuators extending over the

frequency range from UHF through Ku band.

Switch applications include high speed switches (ECM systems), TR witches,

channel or antenna selection switches (telecommunications), duplexers

(radar) and digital phase shifters (phased arrays).

The GC4300 series are also used as passive and active limiters for low to

moderate RF power levels.

Attenuator type applications include amplitude modulators, AGC attenuators,

power levelers and level set attenuators.

Specifications are subject to change, consult the factory for further information.

These devices are ESD sensitive and must be handled using ESD precautions.

plated terminations.

ABSOLUTE MAXIMUM RATINGS AT 25º C

(UNLESS OTHERWISE SPECIFIED)

Rating

Symbol

Value

Unit

Maximum Leakage Current

0.5

uA

Storage Temperature

-65 to +200

ºC

Operating Temperature

-55 to +150

ºC

KEY FEATURES



Available as packaged devices or

as chips for hybrid applications



Low Loss



Suitable for applications to 18Ghz



High Speed



Low Insertion Loss



High Isolation



Reverse Polarity for Applications

with special Bias Considerations



RoHS Compliant

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