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GC4375 Datasheet(PDF) 2 Page - Microsemi Corporation |
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GC4375 Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 4 page GC4310 – GC4375 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2 TM ® Copyright 2007 Rev: 2009-02-02 RoHS Compliant CONTROL DEVICES High Speed NIP Diodes . DEVICE ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)E Model Number 1 VB(V) IR=10μA (Min) CJ (pF) 2 @VR=10V (Max) RS(Ω) 3 @20 mA (Max) TL(nS) IR=6mA/IF=10mA (Typ) Thermal Resistance θ (˚C/W) (Max) GC4371 70 0.1 0.9 70 70 GC4372 70 0.2 0.7 70 70 GC4373 70 0.3 0.6 70 60 GC4374 70 0.4 0.5 70 50 GC4375 70 0.5 0.4 70 40 GC4310 100 0.06 1.5 170 80 GC4311 100 0.1 1 170 70 GC4312 100 0.2 0.9 170 70 GC4313 100 0.3 0.8 170 60 GC4314 100 0.4 0.6 170 50 GC4315 100 0.5 0.4 170 40 GC4320 200 0.06 1.5 200 80 GC4321 200 0.1 1.2 200 70 GC4322 200 0.2 1 200 70 GC4323 200 0.3 0.9 200 60 GC4324 200 0.4 0.8 200 50 GC4325 200 0.5 0.5 200 40 Notes: 1. This series of devices is available in standard case styles 00, 30, and 35. Many other styles are available on request. 2. Capacitance is measured at 1 MHz. 3. Resistance is measured AT 1 GHz using transmission loss techniques. The junction capacitance specified is for a 00 (chip) package style. Standard wafer evaluation and characterization is completed using a style 30 package. Diodes are available in many case styles. Each type offers performance trade-offs. The proper choice of package style depends on the end application and operating environment. Consult factory for assistance. Standard polarity (PIN) diodes and higher voltage PIN and NIP diodes are also available. (See data sheets for GC4200, GC4400, and GC4500 series respectively.) |
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