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GC4601 Datasheet(PDF) 1 Page - Microsemi Corporation

Part # GC4601
Description  CONTROL DEVICES High Power PIN Diodes
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

GC4601 Datasheet(HTML) 1 Page - Microsemi Corporation

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GC4600 – GC4605
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
TM
®
Copyright
 2007
Rev.: 2009-01-19
RoHS Compliant
CONTROL DEVICES
High Power PIN Diodes
For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change, consult factory for the latest information.
These devices are ESD sensitive and must be handled using ESD precautions.
D E SCRI PTI ON
The high power PIN diode series is available in surface mount stud
and insulated stud packages. These PIN diode chips utilize high
resistivity material and an intrinsic float zone process technology thus
ensuring low loss and low distortion characteristics through HF band.
Due to a thick base width of the ”I” layer, these diodes have very high
reverse voltage characteristics with very low thermal impedance.
These PIN chips are passivated with a proprietary high voltage
glassivation process yielding low leakage stable devices.
This series of devices meets RoHS requirements per EU Directive
2002/95/EC.
APPLICATIONS/BENEFITS
 Kilowatt Switching
 Transfer Switched
 MRI T/R Switching
 Power Attenuators
APPLICATIONS
High power PIN diodes are designed as switching elements with
frequencies through UHF band. Applications for these devices include
antenna coupler, high power filter switches and Magnetic Resonance
Imaging (MRI) switches. These devices are designed to withstand
very large CW and pulse power environments where CW and peak
RF voltages are in the kilovolt range and are offered in rugged low
thermal impedance, stud and insulated stud packages.
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
Maximum Leakage Current
@80% of Minimum Rated VB
IR
1.0
uA
Storage Temperature
TSTG
-65 to +150
ºC
Operating Temperature
TOP
-55 to +125
ºC
KEY FEATURES
 Kilowatt Power Handling
 2.5 KV Breakdown Voltage
 Low Loss, Low Distortion through
UHF Band
 Very Low Thermal Impedance for
High Power Dissipation
 Non Magnetic Packaging available
 Surface Mount and Insulated Stud
Packages
 RoHS Compliant
1
1
Most of our devices are supplied with
Gold plated terminations. Other terminal
finishes are available on request. Consult
factory for details.


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