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GC9001 Datasheet(PDF) 1 Page - Microsemi Corporation |
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GC9001 Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 2 page GC9001 – GC9011 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 TM ® Copyright 2007 Rev: 2009-01-19 RoHS Compliant PASSIVE DEVICES – Spiral Bias Elements D E SCRI PTI ON The GC9000 series of spiral bias element chips are photolithographically fabricated planar spiral conductors supported on a high quality fused quartz substrate. These devices are designed to meet hybrid microwave circuit requirements for DC power injection through Ku (or J) band. The actual spiral bias element, consists of a 5 micron, nominal, thick plated gold spiral trace with a 3 mil diameter bonding pad at either end. A dense passivation is applied on the conductive portion of the spiral geometry so that undesirable environmental or particulate effects during operation can be prevented. The bonding pads are left exposed to provide easy, low resistance lead attachment. Fused quartz substrates are used to minimize dielectric losses, near zero TCE and provide durability during handling and assembly. Contemporary fabrication processes combined with Microsemi Lowell’s extensive experience in microwave component and hybrid circuit engineering has generated a product that will be both operationally predictable and reliable when used as a means to supply DC to a small signal hybrid microwave circuit. This series of devices meets RoHS requirements per EU Directive 2002/95/EC. The standard terminal finish is gold unless otherwise specified. Consult the factory if you have special requirements. APPLICATIONS Bias injection into oscillators, amplifiers and microwave switches (bias tees). Can be used to bias tuning varactor diodes, pin diodes, transistors and monolithic circuit components. These spiral elements provide extreme freedom from in band resonance; very smooth wide frequency response. ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Symbol Value Unit Working Current I 250 mA Storage Temperature TSTG -65 to +200 ºC Operating Temperature TOP -55 to +150 ºC IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com Specifications are subject to change, consult factory for the latest information. These devices are ESD sensitive and must be handled using ESD precautions. 1 These devices are supplied with gold terminations suitable for wire-bonding. KEY FEATURES Dimensional Uniformity Planar Design Passivated Spiral Element Physical and Dimensional Stability Through Temp Cycle and Vibration Models as a Lossy Transmission Line Eliminates Potting or Coating Wire- wound Coils Designed for Microwave Applications From 2 to 18 GHz Reduced Assembly Costs RoHS Compliant 1 APPLICATIONS/BENEFITS RF Bias Networks Wideband performance |
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