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GC9001 Datasheet(PDF) 1 Page - Microsemi Corporation

Part # GC9001
Description  PASSIVE DEVICES - Spiral Bias Elements
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

GC9001 Datasheet(HTML) 1 Page - Microsemi Corporation

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GC9001 – GC9011
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
TM
®
Copyright
 2007
Rev: 2009-01-19
RoHS Compliant
PASSIVE DEVICES – Spiral Bias Elements
D E SCRI PTI ON
The GC9000 series of spiral bias element chips are photolithographically
fabricated planar spiral conductors supported on a high quality fused quartz
substrate. These devices are designed to meet hybrid microwave circuit
requirements for DC power injection through Ku (or J) band. The actual spiral
bias element, consists of a 5 micron, nominal, thick plated gold spiral trace
with a 3 mil diameter bonding pad at either end.
A dense passivation is applied on the conductive portion of the spiral
geometry so that undesirable environmental or particulate effects during
operation can be prevented. The bonding pads are left exposed to provide
easy, low resistance lead attachment.
Fused quartz substrates are used to minimize dielectric losses, near zero TCE
and provide durability during handling and assembly.
Contemporary fabrication processes combined with Microsemi Lowell’s
extensive experience in microwave component and hybrid circuit engineering
has generated a product that will be both operationally predictable and
reliable when used as a means to supply DC to a small signal hybrid
microwave circuit.
This series of devices meets RoHS requirements per EU Directive
2002/95/EC. The standard terminal finish is gold unless otherwise specified.
Consult the factory if you have special requirements.
APPLICATIONS
Bias injection into oscillators, amplifiers and microwave switches
(bias tees). Can be used to bias tuning varactor diodes, pin diodes,
transistors and monolithic circuit components. These spiral elements
provide extreme freedom from in band resonance; very smooth wide
frequency response.
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
Working Current
I
250
mA
Storage Temperature
TSTG
-65 to +200
ºC
Operating Temperature
TOP
-55 to +150
ºC
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change, consult factory for the latest information.
These devices are ESD sensitive and must be handled using ESD precautions.
1 These devices are supplied with gold
terminations suitable for wire-bonding.
KEY FEATURES
 Dimensional Uniformity
 Planar Design
 Passivated Spiral Element
 Physical and Dimensional Stability
Through Temp Cycle and Vibration
 Models as a Lossy Transmission
Line
 Eliminates Potting or Coating Wire-
wound Coils
 Designed for Microwave
Applications From 2 to 18 GHz
 Reduced Assembly Costs
 RoHS Compliant
1
APPLICATIONS/BENEFITS
 RF Bias Networks
 Wideband performance


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