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GC4495 Datasheet(PDF) 1 Page - Microsemi Corporation |
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GC4495 Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 4 page GC4410 – GC4495 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 CONTROL DEVICES – HIGH VOLTAGE PIN DIODES TM ® Copyright 2006 Rev: 2009-02-03 RoHS Compliant DESCRIPTION The GC4400 series are high voltage, high power (cathode base) PIN diodes. These high resistivity silicon devices are glass passivated for high stability and reliability and have been proven by thousands of device hours in high reliability systems. Each device can withstand storage temperatures from -65°C to +200°C and will operate over the range from -55°C to +150°C. All devices meet or exceed military environmental specifications of MIL-PRF-19500. The GC4400 series will operate typically with +50 mA forward bias. Breakdown voltages are available up to 750 volts. Consult the factory for higher voltage devices. APPLICATIONS The GC4400 series can be used in RF circuits as an on/off element, as a switch, or as a current controlled resistor in attenuators extending over the frequency range from UHF through Ku band. Switch applications include high speed switches (ECM systems), TR or lobing switches, channel or antenna selection switches (telecommunications), duplexers (radar) and digital phase shifters (phased arrays). The GC4400 series can be used in RF circuits as an on/off at moderate RF power levels. Attenuator type applications include amplitude modulators, AGC attenuators, power levelers and level set attenuators. KEY FEATURES Available as packaged devices or as chips for hybrid applications High power handling Suitable for application to 18Ghz Low Loss Low Distortion RoHS Compliant 1 1 Products are supplied with a Gold finish and are suitable for RoHS complaint assembly. Consult factory for details. APPLICATIONS/BENEFITS TR Switches Antenna Selector Switches Duplexers Digital Phase Shifters ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Symbol Value Unit Leakage Current @80% Minimum Rated VB GC441X GC443X IR 0.5 uA Leakage Current @80% Minimum Rated VB GC449X IR 1.0 uA Operating Temperature TOP -55 to +150 ºC Storage Temperature TSTG -65 to +200 ºC IMPORTANT: For the most current data, consult MICROSEMI’s website: H www.MICROSEMI.com Specifications are subject to change, consult the factory for further information. These devices are ESD sensitive and must be handled using ESD precautions. |
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