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GC4742-00 Datasheet(PDF) 1 Page - Microsemi Corporation |
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GC4742-00 Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 5 page GC4701 - GC4750 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 CONTROL DEVICES – LIMITER DIODES TM ® Copyright 2006 Rev: 2009-01-19 RoHS Compliant 0B DESCRIPTION The GC4700 series diodes are specially processed PIN diodes designed for use in passive or active limiters at frequencies through Ku band. Thirteen categories of devices are offered for flexibility in design of low, medium and high power limiters. Low VB limiters have thinner I regions for faster turn-on time and better flat leakage. Microsemi also manufactures “gold doped” limiters for fastest turn on time. In addition, we manufacture high voltage dual junction limiters for superior peak and CW power handling. This series of diodes meets RoHS requirements per EU Directive 2002/95/EC. APPLICATIONS A diode limiter is a power-sensitive variable attenuator that uses the non-linear properties of the diode to provide an impedance mismatch when sufficient amounts of RF power are incident on the device. The output power is reduced to a level that will not overdrive a receiver, burn out a mixer, etc. For varying input power levels in excess of the diode’s threshold level, the limiter’s output power tends to remain constant. A passive limiter is one in which the limiter diodes are “turned on” by the RF signal itself. An active limiter is one in which the limiter diodes are “turned on” primarily by an external bias current typically supplied by a Schottky detector diode which senses the incident signal. Since limiter diodes are not designed to dissipate large amounts of power, the limiter must reflect or divert the excess incident power back to the source or to another load (i.e. via a circulator, hybrid coupler, etc.). Limiter diodes may be used in wave guides, coax, microstrip, stripline or other media. Single or cascaded devices may be used, depending on power levels. ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Symbol Value Unit Maximum Leakage Current @80% of minimum Rated Vb Ir 0.5 uA Operating Temperature T op -55 to +150 ºC Storage Temperature T stg -65 to +150 ºC IMPORTANT: For the most current data, consult our website: HU www.MICROSEMI.com U Specifications are subject to change, consult the factory for further information. These devices are ESD sensitive and must be handled using ESD precautions. KEY FEATURES Available as packaged devices or as chips for hybrid applications Low Loss Suitable for applications to 18Ghz Excellent flat leakage performance Low 1 dB compression point Gold Doped Diodes for Fast Turn On RoHS Compliant 1 1 Most or our devices are supplied with Gold plated terminations. Other terminal finishes are available on request. Consult factory for details. APPLICATIONS/BENEFITS Receiver protection circuits Amplifier Protection |
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