2N5013 datasheet(3/3 Pages) MICROSEMI

Part #	2N5013

Description	NPN SILICON TRANSISTOR

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN SILICON TRANSISTOR

Qualified per MIL-PRF-19500/727

T4-LDS-0067 Rev. 1 (082021)

Page 3 of 3

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (Cont.)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Base-Emitter Saturation Voltage

IC = 25mA

IC = 20mA

IB = 5mA, Pulsed

2N5010, 2N5011, 2N5012

2N5013, 2N5014, 2N5015

VBE(SAT)

1.0

Vdc

Collector-Emitter Saturation Voltage

IC = 25mA

IC = 20mA

IB = 5mA, Pulsed

2N5010

2N5011

2N5012

2N5013

2N5014

2N5015

VCE(SAT)

1.4

1.5

1.6

1.8

Vdc

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Magnitude of small signal short-circuit forward current transfer ratio

VCE = 10Vdc, IC = 25mA, f = 10MHz

VCE = 10Vdc, IC = 20mA, f = 10MHz

2N5010, 2N5011, 2N5012

2N5013, 2N5014, 2N5015

|hfe|

1.0

Open circuit output capacitance

VCB = 10V, IE = 0, f = 2MHz

Cobo

30

pF

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