MG1041 – MG1059

Microsemi

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

Page 1

Copyright

 2008

Rev: 2009-01-19

GUNN Diodes

Anode Heat Sink

TM

®

Features

●

High Reliability

●

Low-Phase Noise

●

9.5–35.5 GHz Operation

●

Pulsed and CW Designs to 20 mW

Applications

●

Motion Detectors

●

Transmitters and Receivers

●

Beacons

●

Automotive Collision Avoidance Radars

●

Radars

●

Radiometers

●

Instrumentation

Description

Microsemi’s

GaAs

Gunn

diodes,

epi-up

(anode

heatsink), are fabricated from epitaxial layers grown

at MSC by the Vapor Phase Epitaxy technique. The

layers are processed using proprietary techniques

resulting in ultra- low phase and 1/f noise. The diodes

are available in a variety of microwave ceramic

packages for operation from 9.5–35.5 GHz.