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INA333-HT Datasheet(PDF) 5 Page - Texas Instruments |
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INA333-HT Datasheet(HTML) 5 Page - Texas Instruments |
5 / 24 page www.ti.com SBOS514 – MARCH 2010 THERMAL CHARACTERISTICS FOR JD PACKAGE over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT High-K board(2), no airflow 64.9 qJA Junction-to-ambient thermal resistance(1) °C/W No airflow 83.4 qJB Junction-to-board thermal resistance High-K board without underfill 27.9 °C/W qJC Junction-to-case thermal resistance 6.49 °C/W (1) The intent of qJA specification is solely for a thermal performance comparison of one package to another in a standardized environment. This methodolgy is not meant to and will not predict the performance of a package in an application-specific environment. (2) JED51-7, high effective thermal conductivity test board for leaded surface mount packages. THERMAL CHARACTERISTICS FOR HKJ PACKAGE over operating free-air temperature range (unless otherwise noted) PARAMETER MIN TYP MAX UNIT Junction-to-case thermal resistance (to bottom of case) 5.7 qJC °C/W Junction-to-case thermal resistance (to top of case lid - as if formed dead bug) 13.7 ELECTRICAL CHARACTERISTICS: VS = +1.8 V to +5.5 V At TA = +25°C, RL = 10kΩ, VREF = VS/2, and G = 1, unless otherwise noted. TA = –55°C to +125°C TA = +210°C PARAMETER TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNIT INPUT(1) Offset voltage, VOSI ±10 ±25/G ±25 ±75/G ±15 mV RTI(2) vs Temperature ±0.1 ±0.5/G(3) 0.2(4)(5) mV/°C vs Power supply PSR 1.8 V ≤ VS ≤ 5.5 V ±1 ±5/G ±5 ±15/G 2.5(4) mV/V Long-term stability See note (6) Turn-on time to specified See Typical characteristics See Typical characteristics VOSI Impedance Differential ZIN 100 || 3 100 || 3 G Ω || pF Common-mode ZIN 100 || 3 100 || 3 G Ω || pF Common-mode VCM VO = 0 V (V–) + 0.1 (V+) – 0.1 (V–) + 0.1 (V+) – 0.1 V V voltage range Common-mode CMR DC to 60 Hz rejection VCM = (V–) + 0.1 V to G = 1 80 90 dB (V+) – 0.1 V VCM = (V–) + 0.1 V to G = 10 100 110 dB (V+) – 0.1 V VCM = (V–) + 0.1 V to G = 100 100 115 110 dB (V+) – 0.1 V VCM = (V–) + 0.1 V to G = 1000 100 115 113 dB (V+) – 0.1 V INPUT BIAS CURRENT Input bias current IB ±70 ±200 ±1260 ±2044 pA vs Temperature See Typical Characteristic curve See Typical Characteristic curve pA/°C Input offset current IOS ±50 ±200 pA vs Temperature See Typical Characteristic curve See Typical Characteristic curve pA/°C (1) Total VOS, Referred-to-input = (VOSI) + (VOSO/G). (2) RTI = Referred-to-input. (3) Temperature drift is measured from –55°C to +125°C. (4) G = 1000 (5) Temperature drift is measured from 125°C to +210°C. (6) 300-hour life test at +150°C demonstrated randomly distributed variation of approximately 1 mV. Copyright © 2010, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Link(s): INA333-HT |
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