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1N6663US Datasheet(PDF) 1 Page - Microsemi Corporation |
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1N6663US Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 2 page VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS S C O T TS DALE DIVISION 1N6661US thru 1N6663US DESCRIPTION APPEARANCE These “standard recovery” rectifier diodes are military qualified to MIL-PRF-19500/587 and is ideal for high-reliability applications where a failure cannot be tolerated. They have a 500 mA rating with working peak reverse voltages from 225 to 600 volts and are hermetically sealed with void-less-glass construction using an internal “Category I” metallurgical bond. The axial-leaded package configurations are also available by deleting the “US” suffix (see separate data sheet for 1N6661 to 1N6663). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including Fast and Ultrafast device types in both through-hole and surface mount packages. Package “A” or D-5A IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES APPLICATIONS / BENEFITS • Popular JEDEC registered 1N6661 thru 1N6663 series • Voidless hermetically sealed glass package • Triple-Layer Passivation • Internal “Category I” Metallurgical bonds • Working Peak Reverse Voltage 225 to 600 Volts. • JAN, JANTX, and JANTXV available per MIL-PRF- 19500/587 • Axial-leaded equivalents also available without the “US” suffix (see 1N6661 thru 1N6663) • Standard recovery 0.5 Amp rectifiers 225 to 600 V • Military and other high-reliability applications • General rectifier applications including bridges, half- bridges, catch diodes, etc. • Forward surge current capability • Extremely robust construction • Low thermal resistance in small MELF package • Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS MECHANICAL AND PACKAGING • Junction & Storage Temperature: -65oC to +175oC • Thermal Resistance: 35oC/W junction to end cap • Average Rectified Forward Current (I O): 0.5 Amps @ TEC = 110ºC and 0.150 Amps at TEC = 150ºC • Forward Surge Current: 5 Amps @ 8.3 ms half-sine • Solder Temperatures: 260ºC for 10 s (maximum) • CASE: Hermetically sealed void-less hard glass with Tungsten slugs • TERMINATIONS: End caps are copper with Tin/Lead (Sn/Pb) finish • MARKING: Body paint • POLARITY: Cathode band • TAPE & REEL option: Standard per EIA-481-B • WEIGHT: 84 mg (approx) • See package dimensions on last page ELECTRICAL CHARACTERISTICS TYPE WORKING PEAK REVERSE VOLTAGE VRWM MINIMUM BREAKDOWN VOLTAGE VBR @ 100μA AVERAGE RECTIFIED CURRENT (NOTE 2) IO MAXIMUM FORWARD VOLTAGE VF @ 0.4 A (PULSED) MAXIMUM REVERSE CURRENT IR @ VRWM MAXIMUM SURGE CURRENT (NOTE 1) IFSM VOLTS VOLTS AMPS VOLTS μA AMPS 25 oC 150 oC 25 oC 150 oC 1N6661US 1N6662US 1N6663US 225 400 600 270 480 720 0.5 0.5 0.5 0.15 0.15 0.15 1.0 1.0 1.0 0.05 0.05 0.05 300 300 300 5 5 5 NOTE 1: TA = 25 oC, 10 surges of 8.3 ms @ 1 minute intervals NOTE 2: Linearly derate at 8.75 mA/ºC between TEC = 110ºC to 150ºC and 6.0 mA/ºC between TEC = 150ºC to 175ºC Microsemi Scottsdale Division Page 1 Copyright © 2008 1-03-2008 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 |
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