RW1A020ZP

Data Sheet

4/4

www.rohm.com

○

c

2009 ROHM Co., Ltd. All rights reserved.

2009.05 - Rev.A

Measurement circuit

Fig.1-1 Switching Time Measurement Circuit

D.U.T.

Fig.1-2 Switching Waveforms

90%

90%

90%

10%

10%

10%

50%

50%

Pulse Width

tr

tf

Fig.2-1 Gate Charge Measurement Circuit

D.U.T.

Fig.2-2 Gate Charge Waveform

Charge

Notice

This product might cause chip aging and breakdown under the large electrified environment.

Please consider to design ESD protection circuit.

10

100

1000

10000

0.01

0.1

1

10

100

Ta=25°C

f=1MHz

Coss

Ciss

Crss

0

100

200

300

400

500

02

4

6

8

10

Ta=25°C

Pulsed

0.01

0.1

1

10

00.511.5

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

0

1

2

3

4

5

01

2

3

45

6

7

8

Ta=25°C

Pulsed

1

10

100

1000

0.01

0.1

1

10

Pulsed

Fig.10 Reverse Drain Current

vs. Sourse-Drain Voltage

Fig.11 Static Drain-Source On-State

Resistance vs. Gate Source Voltage

Fig.13 Dynamic Input Characteristics

Fig.12 Switching Characteristics

TOTAL GATE CHARGE : Qg [nC]

Fig.14 Typical Capacitance

vs. Drain-Source Voltage