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FDMC7692 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDMC7692 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 7 page  www.fairchildsemi.com 2 Electrical Characteristics T J = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 30 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C 16 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 PA TJ = 125 °C 250 IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 1.2 1.9 3.0 V 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C -6 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 13.3 A 7.2 8.5 m : VGS = 4.5 V, ID = 10.6 A 9.5 11.5 VGS = 10 V, ID = 13.3 A, TJ = 125 °C 9.5 12.0 gFS Forward Transconductance VDD = 5 V, ID = 13.3 A 60 S Dynamic Characteristics Ciss Input Capacitance VDS = 15 V, VGS = 0 V, f = 1 MHz 1260 1680 pF Coss Output Capacitance 480 635 pF Crss Reverse Transfer Capacitance 65 100 pF Rg Gate Resistance 0.9 2.4 : Switching Characteristics td(on) Turn-On Delay Time VDD = 15 V, ID = 13.3 A, VGS = 10 V, RGEN = 6 : 918 ns tr Rise Time 410 ns td(off) Turn-Off Delay Time 21 33 ns tf Fall Time 310 ns Qg(TOT) Total Gate Charge VGS = 0 V to 10 V VDD = 15 V ID = 13.3 A 21 29 nC Total Gate Charge VGS = 0 V to 4.5 V 10 14 nC Qgs Total Gate Charge 5nC Qgd Gate to Drain “Miller” Charge 3 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 13.3 A (Note 2) 0.86 1.2 V VGS = 0 V, IS = 1.9 A (Note 2) 0.75 1.2 trr Reverse Recovery Time IF = 13.3 A, di/dt = 100 A/Ps 24 38 ns Qrr Reverse Recovery Charge 7 14 nC NOTES: 1. RTJA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 30 0 Ps, Duty cycle < 2.0 %. 3. EAS of 58 mJ is based on starting TJ = 25 oC, L = 1 mH, I AS = 10.8 A, VDD = 27 V, VGS = 10 V. a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper b.125 °C/W when mounted on a minimum pad of 2 oz copper ©2010 Fairchild Semiconductor Corporation FDMC7692 Rev.B3 |
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