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3TA150GK04NB Datasheet(PDF) 2 Page - Sirectifier Semiconductors |
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3TA150GK04NB Datasheet(HTML) 2 Page - Sirectifier Semiconductors |
2 / 3 page Symbol Test Conditions Unit IRRM VTM V IGT IDRM mA RthJC VGD tgt min. typ. max. at VDRM, single phase, half wave, Tj=150oC On-State Current 450A, Tj=25oC Inst. measurement dv/dt IH Tj=25oC, IT=1A, VD=6V Tj=150oC, VD=1/2VDRM IT=100A, IG=200mA, Tj=25oC, VD=1/2VDRM, dIG/dt=1A/us Tj=150oC, VD=2/3VDRM, Exponential wave Tj=25oC Junction to case (1/3 Module) 30 30 1.25 150 0.25 10 150 100 0.16 mA V us V/us mA oC/W aPPLICATION: VGT 2 V Three Phase Thyristor Module (Half Bridge) FEATURES * International standard package * Glass passivated chips * RoHS compliance ADVANTAGES * Space and weight savings * Simple mounting with two screws * Improved temperature and power cycling * Reduced protection circuits APPLICATIONS * Welding Machine Power Supply * DC Power Supply * Copper base plate 3TA150GKxxNB Three Phase Thyristor Module (Half Bridge) |
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