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DTB723YE Datasheet(PDF) 1 Page - Rohm |
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DTB723YE Datasheet(HTML) 1 Page - Rohm |
1 / 3 page 1/2 www.rohm.com ○ c 2009 ROHM Co., Ltd. All rights reserved. 2009.10 - Rev.C -200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors) DTB723YE / DTB723YM Applications Dimensions (Unit : mm) Inverter, Interface, Driver Feature 1) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 4) Only the on / off conditions need to be set for operation, making the device design easy. Structure PNP epitaxial plannar silicon transistor (Resistor built-in type) Packaging specifications EMT3 VMT3 DTB723YE Part No. DTB723YM TL 3000 − T2L 8000 − Package Packaging type Taping Taping Code Basic ordering unit (pieces) Absolute maximum ratings (Ta=25 °C) Inner circuit Parameter Symbol VCC −30 −15 to +5 −200 150 150 −55 to +150 DTB723YE DTB723YM V VIN V mA mW IC (max) PD Tj Tstg Unit C C Limits ∗1 ∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land. ∗2 Supply voltage Input voltage Collector current Power dissipation Junction temperature Storage temperature 1.6 0.7 0.15 0.55 0.2 1.0 0.3 (2) 0.5 0.5 (3) 0.2 (1) (3) 0.32 0.8 1.2 0.13 0.5 0.22 0.4 0.4 (2) (1) VMT3 (1) GND (2) IN (3) OUT (1) IN (2) GND (3) OUT EMT3 JEITA No. (SC-75A) JEDEC No. <SOT-416> DTB723YE DTB723YM Abbreviated symbol : M52 Abbreviated symbol : M52 Each lead has same dimensions Each lead has same dimensions R1 R1=2.2k Ω / R2=10kΩ R2 IN GND(+) OUT IN GND(+) OUT |
Similar Part No. - DTB723YE_09 |
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Similar Description - DTB723YE_09 |
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