DTD543XE_1 datasheet(1/3 Pages) ROHM

Part #	DTD543XE

Description	500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)

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Manufacturer	ROHM [Rohm]

Direct Link	http://www.rohm.com

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DTD543XE / DTD543XM

Transistors

Rev.B

1/2

500mA / 12V Low VCE (sat) Digital transistors

(with built-in resistors)

DTD543XE / DTD543XM

Applications

Dimensions (Unit : mm)

Inverter, Interface, Driver

Feature

1) VCE (sat) is lower than conventional products.

2) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input resistors

(see equivalent circuit).

3) The bias resistors consist of thin-film resistors with

complete isolation to allow negative biasing of the

input. They also have the advantage of almost completely

eliminating parasitic effects.

4) Only the on / off conditions need to be set for operation,

making the device design easy.

Structure

NPN epitaxial planar silicon transistor

(Resistor built-in type)

Absolute maximum ratings (Ta=25

°C)

Packaging specifications

Electrical characteristics (Ta=25

°C)

Equivalent circuit

1.6

0.7

0.15

0.55

0.2

1.0

0.3

(2)

0.5

(3)

0.2

(1)

(3)

0.32

0.8

1.2

0.13

0.5

0.22

0.4 0.4

(2)

(1)

VMT3

(1) GND

(2) IN

(3) OUT

(1) IN

(2) GND

(3) OUT

EMT3

JEITA No. (SC-75A)

JEDEC No. <SOT-416>

DTD543XE

DTD543XM

Addreviated symbol : X43

Each lead has same dimensions

Parameter

Symbol

VCC

12

−7 to +12

500

150

−55 to +150

DTD543XE DTD543XM

V

VIN

V

mA

mW

IC (max)

PD

Tj

Tstg

Unit

C

Limits

∗1

∗1 Characteristics of built-in transistor.

∗2 Each terminal mounted on a recommended land.

∗2

Supply voltage

Input voltage

Collector current

Power dissipation

Junction temperature

Storage temperature

Parameter

Symbol

VI(off)

VI(on)

VO(on)

II

IO(off)

R1

GI

R2/R1

fT

Min.

−

2.5

−

3.29

140

1.7

−

60

−

4.7

−

2.1

260

0.3

−

300

1.4

500

6.11

−

2.6

−

V

VCC= 5V, IO= 100

µA

VO= 0.3V, IO= 2mA

IO/II= 100mA / 5mA

VI= 5V

VCC= 12V, VI=0V

VO= 2V, IO= 100mA

VCE= 10V, IE=

−5mA, f=100MHz

mV

mA

µA

k

Ω

−

−−

−

MHz

Typ.

Max.

Unit

Conditions

Input voltage

Output voltage

Input current

Output current

Input resistance

DC current gain

Resistance ratio

Transition frequency

∗ Characteristics of built-in transistor.

∗

EMT3

VMT3

DTD543XE

Part No.

DTD543XM

TL

3000

−

T2L

8000

−

Package

Packaging type

Taping

Code

Basic ordering

unit (pieces)

R1

R1=4.7k

Ω / R2=10kΩ

R2

IN

GND

OUT

IN

GND

OUT

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