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BC858A Datasheet(PDF) 1 Page - Rectron Semiconductor |
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BC858A Datasheet(HTML) 1 Page - Rectron Semiconductor |
1 / 2 page FEATURES MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram SOT-23 BC858A Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 OC ambient temperature unless otherwise specified. 0.118(3.00) 0.012(0.30) 0.020(0.50) 0.003(0.08) 0.006(0.15) 0.110(2.80) 0.019(2.00) 0.071(1.80) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00) SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) 2007-3 ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) DC current gain (VCE= -5V, IC= -2mA) Collector cut-off current (VCB= -25V, IE=0) Collector cut-off current (VCE= -25V, IB=0) Emitter cut-off current (VEB= -5V, IC=0) Collector-emitter saturation voltage (IC= -100mA, IB= -5mA) Base-emitter saturation voltage (IC= -100mA, IB= -10mA) Transition frequency (VCE= -5V, IC= -10mA, f= 100MHZ) CHARACTERISTICS SYMBOL UNITS - - - - -0.1 -0.1 m A m A m A V V V V V Collector-base breakdown voltage (IC= -10mA, IE=0) Collector-emitter breakdown voltage (IC= -10mA, IB=0) Emitter-base breakdown voltage (IE= -10mA, IC=0) DEVICE MARKING BC858A Notes: 1. Transistor mounted on an FR4 Printed-circuit board. 3J V(BR)CBO V(BR)CEO V(BR)EBO IEBO hFE(1) ICBO ICEO VCE(sat) VBE(sat) fT MAX -30 -30 -5 - 125 100 MIN 0.055(1.40) 0.047(1.20) - -0.1 - - - - -1.1 MHZ -0.5 250 BASE EMITTER COLLECTOR * * * * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -30 V Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC 1 1 2 3 2 3 Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”. |
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