QS5U12

Transistors

Rev.B

1/4

2.5V Drive Nch+SBD MOS FET

QS5U12

Structure

Silicon N-channel MOSFET

Schottky Barrier DIODE

Features

1) The QS5U12 combines Nch MOSFET with a

Schottky barrier diode in a single TSMT5 package.

2) Low on-state resistance with fast switching.

3) Low voltage drive (2.5V).

4) The Independently connected Schottky barrier diode

has low forward voltage.

Applications

Load switch, DC / DC conversion

External dimensions (Unit : mm)

Each lead has same dimensions

TSMT5

0~0.1

0.16

0.85

1.0MAX

0.7

(1)

(3)

(2)

(4)

(5)

0.4

1.9

2.9

0.95

0.95

Abbreviated symbol : U12

Packaging specifications

Package

Code

Taping

Basic ordering unit (pieces)

QS5U12

TR

3000

Type

Equivalent circuit

(1) Anode

(2) Source

(3) Gate

(4) Drain

(5) Cathode

∗2

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

∗1

(1)

(2)

(3)

(5)

(4)