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2009.02 - Rev.A

4V Drive Pch MOSFET

TT8J2

Structure

Dimensions (Unit : mm)

Silicon P-channel MOSFET

Features

1) Low On-resistance.

2) High Power Package.

3) Low voltage drive. (4V)

Applications

Switching

Packaging specifications

Inner circuit

Package

Code

Taping

Basic ordering unit (pieces)

TT8J2

TR

3000

Type

Absolute maximum ratings (Ta=25

°C)

<It is the same ratings for the Tr1 and Tr2.>

∗1

∗2

∗1

Parameter

V

Symbol

V

A

A

A

A

W / TOTAL

°C

Tch

°C

Tstg

Unit

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipation

Channel temperature

Range of Storage temperature

Continuous

Pulsed

Continuous

Pulsed

∗1 Pw≤10µs, Duty cycle≤1%

∗2 When mounted on a ceramic board

Source current

(Body diode)

−30

±20

±2.5

±10

−0.8

−10

1.25

W / ELEMENT

1.0

150

−55 to +150

Limits

Thermal resistance

Parameter

°C / W / TOTAL

Rth(ch-a)

Symbol

Limits

Unit

Channel to ambient

∗ Mounted on a ceramic board

100

°C / W / ELEMENT

125

∗

Each lead has same dimensions

(8)

(7)

(5)

(6)

(1)

(2)

(4)

(3)

Abbreviated symbol : J02

TSST8

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Source

(4) Tr2 Gate

(5) Tr2 Drain

(6) Tr2 Drain

(7) Tr1 Drain

(8) Tr1 Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

∗2

∗1

(8)

(7)

(1)

(2)

∗2

∗1

(6)

(5)

(3)

(4)