UM6J1N

Data Sheet

2/3

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c

2009 ROHM Co., Ltd. All rights reserved.

2009.04 - Rev.A

Electrical characteristics (Ta=25

°C)

<It is the same characteristics for Tr1 and Tr2.>

Parameter

Symbol

Min.

−

Typ.

Max.

Unit

Conditions

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

−

±10

−30

−−

−−

−1

−1.0

−−2.5

V

−

0.9

1.4

−

1.4

2.1

Ω

Ω

−

1.6

2.4

Ω

0.2

−−

−

30

−

pF

−10V

−

4

5

−

pF

−

8

−

pF

f=1MHz

−

5

−

ns

−

30

−

ns

−

40

−

ns

−−

ns

−15V

−0.15A

−10V

100

Ω

Ω

∗ Pulsed

∗

∗

∗

∗

∗

∗

Body diode characteristics (source-drain)

−−

−1.2

V

Forward voltage

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

∗Pulsed

∗

Electrical characteristic curves

DRAIN-SOURCE VOLTAGE :

0.01

1

10

100

0.1

1

10

100

Fig.1 Typical Capacitance

vs. Drain-Source Voltage

Ta=25

°C

f=1MHz

Ciss

Crss

Coss

DRAIN CURRENT :

0.01

1

10

100

1000

0.1

1

Fig.2 Switching Characteristics

Ta=25

°C

−15V

−10V

Ω

Pulsed

tf

td(off)

td(on)

tr

TOTAL GATE CHARGE : Qg (nC)

0

0

1

2

3

4

5

6

7

8

0.2

0.4

0.6

0.8

1

Fig.3 Dynamic Input Characteristics

Ta=25

°C

−15V

−200mA

Ω

Pulsed

GATE-SOURCE VOLTAGE :

0.001

0.01

0.1

1

1.4 1.6

2.0

1.8

2.8 3.0 3.2 3.4

2.2 2.4 2.6

Fig.4 Typical Transfer Characteristics

−10V

Pulsed

Ta=125

°C

75

°C

25

°C

−25°C

GATE-SOURCE VOLTAGE :

0

0

15

5

10

20

210

46

8

19

35

7

Fig.5 Static Drain-Source

On-State Resistance vs.

Gate-Source Voltage

Ta=25

°C

Pulsed

−200mA

−125mA

SOURCE-DRAIN VOLTAGE :

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.01

0.1

1

Fig.6 Reverse Drain Current vs.

Source-Drain Voltage

Pulsed

Ta=125

°C

75

°C

25

°C

−25°C