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X22C12DI Datasheet(PDF) 1 Page - Xicor Inc. |
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X22C12DI Datasheet(HTML) 1 Page - Xicor Inc. |
1 / 12 page X22C12 1 Nonvolatile Static RAM © Xicor, Inc. 1991, 1995 Patents Pending Characteristics subject to change without notice 3817-2.4 7/30/96 T0/C0/D1 SH FEATURES • High Performance CMOS —150ns RAM Access Time • High Reliability —Store Cycles: 1,000,000 —Data Retention: 100 Years • Low Power Consumption —Active: 40mA Max. —Standby: 100 µA Max. • Infinite Array Recall, RAM Read and Write Cycles • Nonvolatile Store Inhibit: VCC = 3.5V Typical • Fully TTL and CMOS Compatible • JEDEC Standard 18-Pin 300-mil DIP • 100% Compatible with X2212 —With Timing Enhancements DESCRIPTION The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a non- volatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM (STORE) and from E2PROM to RAM (RECALL). The STORE operation is completed within 5ms or less and the RECALL is completed within 1 µs. Xicor NOVRAMs are designed for unlimited write opera- tions to the RAM, either RECALLs from E2PROM or writes from the host. The X22C12 will reliably endure 1,000,000 STORE cycles. Inherent data retention is greater than 100 years. 3817 FHD F01 NONVOLATILE E 2 PROM MEMORY ARRAY ROW SELECT STATIC RAM MEMORY ARRAY COLUMN SELECT INPUT DATA CONTROL CONTROL LOGIC VCC VSS COLUMN I/O CIRCUITS STORE RECALL I/O1 I/O2 I/O3 I/O4 CS WE A7 A6 A5 ARRAY RECALL STORE A0 A2 A4 A1 A3 1K Bit X22C12 256 x 4 FUNCTIONAL DIAGRAM PIN CONFIGURATION PLASTIC DIP CERDIP A7 A4 A3 A2 A1 A0 CS VSS STORE 1 2 3 4 5 6 7 8 9 18 17 16 15 14 13 12 11 10 VCC A6 A5 I/O4 I/O3 I/O2 I/01 WE X22C12 RECALL 3817 FHD F02 SOIC 3815 FHD F10.1 A7 A4 A3 A2 A1 A0 CS VSS STORE RECALL 1 VCC A6 A5 I/O4 NC NC I/O3 I/O2 I/O1 WE X22C12 2 3 4 5 6 7 8 20 19 18 17 16 15 14 13 9 10 12 11 |
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