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HFD2N60 Datasheet(PDF) 1 Page - SemiHow Co.,Ltd. |
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HFD2N60 Datasheet(HTML) 1 Page - SemiHow Co.,Ltd. |
1 / 8 page ◎ SEMIHOW REV.A0,July 2005 BV DSS = 600 V R DS(on) typ = 4.0 Ω I D = 1.8 A Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ.) Extended Safe Operating Area Lower R DS(ON) : 4.0 Ω (Typ.) @VGS=10V 100% Avalanche Tested Thermal Resistance Characteristics FEATURES Absolute Maximum Ratings T C=25℃ unless otherwise specified HFD2N60 / HFU2N60 600V N-Channel MOSFET Symbol Parameter Value Units V DSS Drain-Source Voltage 600 V I D Drain Current – Continuous (T C = 25℃) 1.8 A Drain Current – Continuous (T C = 100℃) 1.1 A I DM Drain Current – Pulsed (Note 1) 7.2 A V GS Gate-Source Voltage ±30 V E AS Single Pulsed Avalanche Energy (Note 2) 150 mJ I AR Avalanche Current (Note 1) 1.8 A E AR Repetitive Avalanche Energy (Note 1) 4.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P D Power Dissipation (T A=25 °C) * 2.5 W Power Dissipation (T C = 25℃) - Derate above 25℃ 44 W 0.35 W/℃ T J, TSTG Operating and Storage Temperature Range -55 to +150 ℃ T L Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 ℃ Symbol Parameter Typ. Max. Units RθJC Junction-to-Case -- 2.87 ℃/W RθJA Junction-to-Ambient* -- 50 RθJA Junction-to-Ambient -- 110 July 2005 D-PAK 1.Gate 2. Drain 3. Source I-PAK HFD2N60 HFU2N60 * When mounted on the minimum pad size recommended (PCB Mount) 2 1 2 3 1 3 |
Similar Part No. - HFD2N60 |
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Similar Description - HFD2N60 |
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