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HFU1N80 Datasheet(PDF) 2 Page - SemiHow Co.,Ltd. |
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HFU1N80 Datasheet(HTML) 2 Page - SemiHow Co.,Ltd. |
2 / 8 page ◎ SEMIHOW REV.A0,April 2006 Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=170mH, I AS=1.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. I SD≤1.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Electrical Characteristics T C=25 °C unless otherwise specified I S Continuous Source-Drain Diode Forward Current -- -- 1.0 A I SM Pulsed Source-Drain Diode Forward Current -- -- 4.0 V SD Source-Drain Diode Forward Voltage I S = 1.0 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time I S = 1.0 A, VGS = 0 V di F/dt = 100 A/μs (Note 4) -- 310 -- ㎱ Qrr Reverse Recovery Charge -- 0.8 -- μC Symbol Parameter Test Conditions Min Typ Max Units V GS Gate Threshold Voltage V DS = VGS, ID = 250 ㎂ 2.5 -- 4.5 V R DS(ON) Static Drain-Source On-Resistance V GS = 10 V, ID = 0.5 A -- 13 16 Ω On Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 ㎂ 800 -- -- V ΔBV DSS /ΔT J Breakdown Voltage Temperature Coefficient I D = 250 ㎂, Referenced to25℃ -- 1.0 -- V/℃ I DSS Zero Gate Voltage Drain Current V DS = 800 V, VGS = 0 V -- -- 1 ㎂ V DS = 640 V, TC = 125℃ -- -- 10 ㎂ I GSSF Gate-Body Leakage Current, Forward V GS = 30 V, VDS = 0 V -- -- 100 ㎁ I GSSR Gate-Body Leakage Current, Reverse V GS = -30 V, VDS = 0 V -- -- -100 ㎁ Off Characteristics C iss Input Capacitance V DS = 25 V, VGS = 0 V, f = 1.0 MHz -- 150 195 ㎊ C oss Output Capacitance -- 20 26 ㎊ C rss Reverse Transfer Capacitance -- 5.5 7.2 ㎊ Dynamic Characteristics t d(on) Turn-On Time V DS = 400 V, ID = 1.0 A, R G = 25 Ω (Note 4,5) -- 12 30 ㎱ t r Turn-On Rise Time -- 40 90 ㎱ t d(off) Turn-Off Delay Time -- 25 60 ㎱ t f Turn-Off Fall Time -- 45 100 ㎱ Q g Total Gate Charge V DS = 640 V, ID = 1.0 A, V GS = 10 V (Note 4,5) -- 7.5 10.0 nC Q gs Gate-Source Charge -- 1.2 -- nC Q gd Gate-Drain Charge -- 4.5 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics |
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