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HFH19N60 Datasheet(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFH19N60 Datasheet(HTML) 3 Page - SemiHow Co.,Ltd. |
3 / 7 page ◎ SEMIHOW REV.A0,OCT 2009 V DS, Drain-Source Voltage [V] V SD, Source-Drain Voltage [V] I D, Drain Current [A] V GS, Gate-Source Voltage [V] Typical Characteristics 10 -1 10 0 10 1 0 1000 2000 3000 4000 5000 6000 7000 8000 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ∗ Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 0 20 40 60 80 100 0 2 4 6 8 10 12 V DS = 300V V DS = 120V V DS = 480V * Note : I D = 18.5A Q G, Total Gate Charge [nC] |
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