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HFP4N50 Datasheet(PDF) 1 Page - SemiHow Co.,Ltd. |
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HFP4N50 Datasheet(HTML) 1 Page - SemiHow Co.,Ltd. |
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1 / 8 page  ◎ SEMIHOW REV.A0,July 2005 BV DSS = 500 V R DS(on) typ = 2.0 Ω I D = 3.4 A Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower R DS(ON) : 2.0 Ω (Typ.) @VGS=10V 100% Avalanche Tested Thermal Resistance Characteristics FEATURES Absolute Maximum Ratings T C=25℃ unless otherwise specified HFP4N50 500V N-Channel MOSFET Symbol Parameter Typ. Max. Units RθJC Junction-to-Case -- 1.78 ℃/W RθCS Case-to-Sink 0.5 -- RθJA Junction-to-Ambient -- 62.5 July 2005 1.Gate 2. Drain 3. Source 2 1 3 TO-220 Symbol Parameter Value Units V DSS Drain-Source Voltage 500 V I D Drain Current – Continuous (T C = 25℃) 3.4 A Drain Current – Continuous (T C = 100℃) 2.15 A I DM Drain Current – Pulsed (Note 1) 13.6 A V GS Gate-Source Voltage ±30 V E AS Single Pulsed Avalanche Energy (Note 2) 440 mJ I AR Avalanche Current (Note 1) 3.4 A E AR Repetitive Avalanche Energy (Note 1) 7.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25℃) - Derate above 25℃ 70 W 0.56 W/℃ T J, TSTG Operating and Storage Temperature Range -55 to +150 ℃ T L Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 ℃ |
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