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HFS3N80 Datasheet(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFS3N80 Datasheet(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 8 page  ◎ SEMIHOW REV.A0,Dec 2005 10 -1 10 0 10 1 0 300 600 900 1200 1500 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] Typical Characteristics 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 ℃ ※ Notes : 1. V GS = 0V 2. 250μ s Pulse Test 25℃ V SD, Source-Drain voltage [V] 0 4 8 12 16 20 0 2 4 6 8 10 12 V DS = 400V V DS = 160V V DS = 640V ※ Note : I D = 3.0A Q G, Total Gate Charge [nC] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics V DS, Drain-Source Voltage [V] V GS, Gate-Source Voltage [V] I D, Drain Current [A] |
Similar Part No. - HFS3N80 |
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Similar Description - HFS3N80 |
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