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HTX12-600 Datasheet(PDF) 2 Page - SemiHow Co.,Ltd. |
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HTX12-600 Datasheet(HTML) 2 Page - SemiHow Co.,Ltd. |
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2 / 6 page  ◎ SEMIHOW REV.1.0 Jan 2006 Electrical Characteristics (Ta=25℃) Symbol Parameter Min Typ Max Units IGT Gate Trigger Current VD=6V, RL=10Ω 1+, 1-, 3- 30 mA VGT Gate Trigger Voltage VD=6V, RL=10Ω 1+, 1-, 3- 1.5 V VGD Non Trigger Gate Voltage 0.2 V (dv/dt)c Critical Rate of Rise of Off-State Voltage at Communication 10.0 V/uS IH HoldingCurrent 20 mA IDRM Repetitive Peak Off- State Current 2.0 mA VTM Peak On-State Voltage 1.4 V Test Conditions Tj=125℃, VD=1/2VDRM IT=6A, Inst, Measurement Tj=125℃, VD=2/3VDRM (di/dt)c=-6A/ms VD=VDRM, Single Phase, Half Wave, Tj=125℃ Thermal Characteristics Symbol Parameter Test Conditions Case Min Typ Max Units HTP16-600 1.8 ℃/W HTS16-600 3.3 ℃/W Junction to Case Thermal Resistance RTH(J-C) |
Similar Part No. - HTX12-600 |
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Similar Description - HTX12-600 |
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