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HFS5N60S Datasheet(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFS5N60S Datasheet(HTML) 3 Page - SemiHow Co.,Ltd. |
3 / 7 page ◎ SEMIHOW REV.A0,Aug 2007 V DS, Drain-Source Voltage [V] Typical Characteristics 0 2 4 6 8 10 0 1 2 3 4 5 6 * Note : T J = 25 oC V GS = 20V V GS = 10V I D , Drain Current [A] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 25 oC 150 oC * Note : 1. V GS = 0V 2. 250 µs Pulse Test V SD , Source-Drain Voltage [V] 2 4 6 8 10 10 -1 10 0 10 1 * Note 1. V DS = 50V 2. 250 µs Pulse Test -55 oC 150 oC 25 oC V GS , Gate-Source Voltage [V] 10 -1 10 0 10 1 0 200 400 600 800 1000 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd * Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0 2 4 6 8 10 12 0 2 4 6 8 10 12 Q G, Total Gate Charge [nC] * Note : I D = 4.5A V DS = 300V V DS = 120V V DS = 480V Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics |
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