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HFD3N80 Datasheet(PDF) 2 Page - SemiHow Co.,Ltd. |
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HFD3N80 Datasheet(HTML) 2 Page - SemiHow Co.,Ltd. |
2 / 9 page ◎ SEMIHOW REV.A0,Dec 2005 Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=67mH, I AS=3.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. I SD≤2.5A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Electrical Characteristics T C=25 °C unless otherwise specified I S Continuous Source-Drain Diode Forward Current -- -- 2.5 A I SM Pulsed Source-Drain Diode Forward Current -- -- 10 V SD Source-Drain Diode Forward Voltage I S = 2.5 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time I S = 3.0 A, VGS = 0 V di F/dt = 100 A/μs (Note 4) -- 650 -- ㎱ Qrr Reverse Recovery Charge -- 5.2 -- μC Symbol Parameter Test Conditions Min Typ Max Units V GS Gate Threshold Voltage V DS = VGS, ID = 250 ㎂ 2.5 -- 4.5 V R DS(ON) Static Drain-Source On-Resistance V GS = 10 V, ID = 1.25 A -- 4.0 4.8 Ω On Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 ㎂ 800 -- -- V ΔBV DSS /ΔT J Breakdown Voltage Temperature Coefficient I D = 250 ㎂, Referenced to25℃ -- 0.99 -- V/℃ I DSS Zero Gate Voltage Drain Current V DS = 800 V, VGS = 0 V -- -- 1 ㎂ V DS = 640 V, TC = 125℃ -- -- 10 ㎂ I GSSF Gate-Body Leakage Current, Forward V GS = 30 V, VDS = 0 V -- -- 100 ㎁ I GSSR Gate-Body Leakage Current, Reverse V GS = -30 V, VDS = 0 V -- -- -100 ㎁ Off Characteristics C iss Input Capacitance V DS = 25 V, VGS = 0 V, f = 1.0 MHz -- 700 910 ㎊ C oss Output Capacitance -- 70 90 ㎊ C rss Reverse Transfer Capacitance -- 7 9 ㎊ Dynamic Characteristics t d(on) Turn-On Time V DS = 400 V, ID = 3.0 A, R G = 25 Ω (Note 4,5) -- 20 40 ㎱ t r Turn-On Rise Time -- 55 110 ㎱ t d(off) Turn-Off Delay Time -- 30 60 ㎱ t f Turn-Off Fall Time -- 40 80 ㎱ Q g Total Gate Charge V DS = 640V, ID = 3.0 A, V GS = 10 V (Note 4,5) -- 17 22 nC Q gs Gate-Source Charge -- 4.5 -- nC Q gd Gate-Drain Charge -- 7.5 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics |
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Similar Description - HFD3N80 |
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