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B5819WS Datasheet(PDF) 1 Page - Shanghai Shunye Electronics Co.,Ltd. |
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B5819WS Datasheet(HTML) 1 Page - Shanghai Shunye Electronics Co.,Ltd. |
1 / 4 page Schottky Barrier Diode B5817WS-B5819WS FEATURES Pb Lead-free Extremely low VF. Low stored change,majority carrier conduction. Low power loss/high efficient APPLICATIONS For Use In Low Voltage, High Frequency Inverters. SOD-323 Free Wheeling, And Polarity Protection Applications. ORDERING INFORMATION Type No. Marking Package Code B5817WS SJ SOD-323 B5818WS SK SOD-323 B5819WS SL SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter symbol B5817WS B5818WS B5819WS Unit Non-Repetitive Peak reverse voltage VRM 20 30 40 V Peak repetitive Peak reverse voltage Working Peak Reverse voltage DC Reverse Voltage VRRM VRWM VR 20 30 40 V RMS Reverse Voltage VR(RMS) 14 21 28 V Average Rectified output Current Io 1 A Peak forward surge current@=8.3ms IFSM 25 A Repetitive Peak Forward Current IFRM 625 mA Power Dissipation Pd 250 mW Thermal Resistance Junction to Ambient RθJA 500 ℃ /W Storage temperature TSTG -65~+150 ℃ www.shunyegroup.com |
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