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B5819WS Datasheet(PDF) 1 Page - Shanghai Shunye Electronics Co.,Ltd.

Part # B5819WS
Description  Schottky Barrier Diode
Download  4 Pages
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Manufacturer  SY [Shanghai Shunye Electronics Co.,Ltd.]
Direct Link  http://www.shunyegroup.com.cn/
Logo SY - Shanghai Shunye Electronics Co.,Ltd.

B5819WS Datasheet(HTML) 1 Page - Shanghai Shunye Electronics Co.,Ltd.

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Schottky Barrier Diode
B5817WS-B5819WS
FEATURES
Pb
Lead-free
Extremely low VF.
Low stored change,majority carrier
conduction.
Low power loss/high efficient
APPLICATIONS
For Use In Low Voltage, High Frequency Inverters.
SOD-323
Free Wheeling, And Polarity Protection Applications.
ORDERING INFORMATION
Type No.
Marking
Package Code
B5817WS
SJ
SOD-323
B5818WS
SK
SOD-323
B5819WS
SL
SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
symbol
B5817WS
B5818WS
B5819WS
Unit
Non-Repetitive Peak reverse voltage
VRM
20
30
40
V
Peak repetitive Peak reverse voltage
Working Peak Reverse voltage
DC Reverse Voltage
VRRM
VRWM
VR
20
30
40
V
RMS Reverse Voltage
VR(RMS)
14
21
28
V
Average Rectified output Current
Io
1
A
Peak forward surge current@=8.3ms
IFSM
25
A
Repetitive Peak Forward Current
IFRM
625
mA
Power Dissipation
Pd
250
mW
Thermal Resistance Junction to Ambient
RθJA
500
℃
/W
Storage temperature
TSTG
-65~+150
℃
www.shunyegroup.com


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