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X28HT010D-25 Datasheet(PDF) 8 Page - Xicor Inc. |
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X28HT010D-25 Datasheet(HTML) 8 Page - Xicor Inc. |
8 / 13 page 8 X28HT010 CE Controlled Write Cycle Page Write Cycle Notes: (5) Between successive byte writes within a page write operation, OE can be strobed LOW: e.g. this can be done with CE and WE HIGH to fetch data from another memory device within the system for the next write; or with WE HIGH and CE LOW effectively performing a polling operation. (6) The timings shown above are unique to page write operations. Individual byte load operations within the page write must conform to either the CE or WE controlled write cycle timing. 6613 FHD F07 ADDRESS tAS tOEH tWC tAH tOES tWPH tCS tDV tDS tDH tCH CE WE OE DATA IN DATA OUT HIGH Z DATA VALID tCW 6613 FHD F08 WE OE (5) LAST BYTE BYTE 0 BYTE 1 BYTE 2 BYTE n BYTE n+1 BYTE n+2 tWP tWPH tBLC tWC CE ADDRESS * (6) I/O *For each successive write within the page write operation, A8–A16 should be the same or writes to an unknown address could occur. |
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