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SSM40T03GP Datasheet(PDF) 2 Page - Silicon Standard Corp. |
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SSM40T03GP Datasheet(HTML) 2 Page - Silicon Standard Corp. |
2 / 5 page www.SiliconStandard.com 2 of 5 SSM40T03GP,S 9/16/2005 Rev.3.1 ELECTRICAL CHARACTERISTICS (at Tj=25°C, unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V ∆BV DSS/ ∆Tj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA - 0.032 - V/°C RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=18A - - 25 m Ω VGS=4.5V, ID=14A - - 45 m Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=18A - 15 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150 oC) VDS=24V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= ±25V - - ±100 nA Qg Total Gate Charge 2 ID=18A - 8.8 - nC Qgs Gate-Source Charge VDS=20V - 2.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 5.8 - nC td(on) Turn-on Delay Time 2 VDS=15V - 6 - ns tr Rise Time ID=18A - 62 - ns td(off) Turn-off Delay Time RG=3.3Ω , VGS=10V - 16 - ns tf Fall Time RD=0.83Ω - 4.4 - ns Ciss Input Capacitance VGS=0V - 655 - pF Coss Output Capacitance VDS=25V - 145 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 95 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 28 A ISM Pulsed Source Current ( Body Diode ) 1 -- 95 A VSD Forward On Voltage 2 Tj=25°C, IS=28A, VGS=0V - - 1.3 V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width < 300us, duty cycle < 2%. |
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