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SSM4226M Datasheet(PDF) 2 Page - Silicon Standard Corp. |
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SSM4226M Datasheet(HTML) 2 Page - Silicon Standard Corp. |
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2 / 4 page  www.SiliconStandard.com 2 of 4 SSM4226M/GM 8/06/2004 Rev.1.02 Electrical Characteristics @ Tj=25 oC (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V ∆B V DSS/ ∆Tj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA - 0.03 - V/°C RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=6A - - 18 m Ω VGS=4.5V, ID=4A - - 28 m Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=6A - 15 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 oC) VDS=24V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= ± 20V - - ±100 nA Qg Total Gate Charge 2 ID=8A - 20 30 nC Qgs Gate-Source Charge VDS=24V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 12 - nC td(on) Turn-on Delay Time 2 VDS=15V - 12 - ns tr Rise Time ID=1A - 8 - ns td(off) Turn-off Delay Time RG=3.3Ω ,VGS=10V - 31 - ns tf Fall Time RD=15Ω -12 - ns Ciss Input Capacitance VGS=0V - 1450 2320 pF Coss Output Capacitance VDS=25V - 320 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 230 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=1.7A, VGS=0V - - 1.2 V t rr Reverse Recovery Time IS=8A, VGS=0V, - 27 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 18 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board ; 135°C/Wwhen mounted on Min. copper pad. |
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