N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

08/17/2007 Rev.1.00

www.SiliconStandard.com

1

SSM4501GM

PRODUCT SUMMARY

Simple Drive Requirement

Low On-resistance

Fast Switching

DESCRIPTION

The advanced power MOSFETs from Silicon Standard Corp.

provide the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters.

ABSOLUTE MAXIMUM RATINGS

Pb-free; RoHS-compliant

30V

28mΩ

7A

P-CH

-30V

50mΩ

-5.3A

S1

G1

S2

G2

D1

D1

D2

D2

SO-8

G2

D2

S2

G1

D1

S1

Symbol

Parameter

Rating

Units

N-channel

P-channel

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

3

-5.3

A

Continuous Drain Current

3

-4.7

A

Pulsed Drain Current

1

-20

A

Total Power Dissipation

W

Linear Derating Factor

W/℃

Storage Temperature Range

℃

Operating Junction Temperature Range

℃

Symbol

Value

Unit

Rthj-amb

Thermal Resistance Junction-ambient

3

Max.

62.5

℃/W

-55 to 150

0.016

-55 to 150

5.8

20

2

Parameter

THERMAL DATA

30

±20

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