SSM4513M datasheet(7/8 Pages) SSC

Part #	SSM4513M

Description	N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

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Manufacturer	SSC [Silicon Standard Corp.]

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SSM4513M/GM

10/12/2004 Rev.2.01

P-Channel

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

td(on) tr

td(off) t

f

VDS

VGS

10%

90%

Q

VG

-4.5V

QGS

QGD

QG

Charge

0

2

4

6

8

10

12

0.0

3.0

6.0

9.0

12.0

Q G , Total Gate Charge (nC)

I D =-4A

V DS =-28V

10

100

1000

1

5

9

131721

2529

-V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

0.001

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

100

1000

t , Pulse Width (s)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthja=135

oC/W

t

T

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

0.01

0.1

1

10

100

0.1

1

10

100

-V DS , Drain-to-Source Voltage (V)

T A =25

o C

Single Pulse

1ms

10ms

100ms

1s

10s

DC

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SSM4513M Datasheet(PDF) 7 Page - Silicon Standard Corp.

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