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P-channel Enhancement-mode Power MOSFET

-40V

40m

Ω

-6A

The SSM9563GM acheives fast switching performance

with low gate charge without a complex drive circuit. It

is suitable for low voltage applications such as DC/DC

Pb-free; RoHS-compliant SO-8

PRODUCT SUMMARY

DESCRIPTION

Notes:

1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.

2.Pulse width <300us, duty cycle <2%.

3.Mounted on a square inch of copper pad on FR4 board; 125°C/W when mounted on the minimum pad area required for soldering.

converters and general load-switching circuits.

The SSM9563GM is supplied in an RoHS-compliant

SO-8 package, which is widely used for medium power

commercial and industrial surface mount applications.

S

S

S

G

D

D

D

D

SO-8

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Units

V

A

W/°C

Symbol

Parameter

Value

Units

Maximum thermal resistance, junction-ambient

3

50

°C/W

Drain-source voltage

-40

V

Gate-source voltage

±25

Continuous drain current

-6

A

-4.8

A

Pulsed drain current

1

-30

2.5

W

-55 to 150

°C

Operating junction temperature range

-55 to 150

°C

Linear derating factor

0.02

THERMAL CHARACTERISTICS

Storage temperature range

SSM9563GM

9/26/2006 Rev.3.01