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BCV46 Datasheet(PDF) 1 Page - Zetex Semiconductors |
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BCV46 Datasheet(HTML) 1 Page - Zetex Semiconductors |
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1 / 1 page SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 SEPTEMBER 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE BCV26 - BCV27 BCV46 - BCV47 PARTMARKING DETAILS BCV26 - ZFD BCV46 - ZFE ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BCV26 BCV46 UNIT Collector-Base Voltage VCBO -40 -80 V Collector-Emitter Voltage VCEO -30 -60 V Emitter-Base Voltage VEBO -10 V Peak Pulse Current ICM -800 mA Continuous Collector Current IC -500 mA Base Current IB -100 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL BCV26 BCV46 UNIT CONDITIONS. MIN. MAX. MIN. MAX. Collector-Base Breakdown Voltage V(BR)CBO -40 -80 V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO -30 -60 V IC=10mA * Emitter-Base Breakdown Voltage V(BR)EBO -10 -10 V IE=10µA Collector Cut-Off Current ICBO -100 -10 -100 -10 nA nA µ A µ A VCB= -30V VCB= -60V VCB=-30V,Tamb=150oC VCB=-60V,Tamb=150oC Emitter Base Cut-Off Current IEBO -100 -100 nA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -1.0 -1.0 V IC=-100mA,IB=-0.1mA* Base-Emitter Saturation Voltage VBE(sat) -1.5 -1.5 V IC=-100mA,IB=-0.1mA* Static Forward Current Transfer Ratio hFE 4K 10K 20K 4K 2K 4K 10K 2K IC=-100µΑ, VCE=-1V IC=-10mA, VCE=-5V* IC=-100mA, VCE=-5V* IC=-500mA, VCE=-5V* Transition Frequency fT 200 Typical 200 Typical MHz IC=-50mA, VCE=-5V f = 20MHz Output Capacitance Cobo 4.5 Typical 4.5 Typical pF VCB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for these devices Periodic Sample Test Only. BCV26 BCV46 C B E 3 - 21 |
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