Dual, SiGe, High-Linearity, 1200MHz to 2000MHz

Downconversion Mixer with LO

Buffer/Switch

5

3.3V SUPPLY, HIGH-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS

(Typical Application Circuit optimized for the Standard RF Band (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.43kI. Typical

noted.) (Note 6)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

Conversion Gain

(Note 7)

8.2

dB

Conversion Gain Flatness

D

±0.05

dB

Gain Variation Over Temperature

-0.01

dB/NC

Input Compression Point

(Note 8)

10.6

dBm

Input Third-Order Intercept Point

IIP3

23.6

dBm

Input Third-Order Intercept Point

Variation Over Temperature

±0.5

dBm

Noise Figure

Single sideband, no blockers present

9.8

dB

Noise Figure Temperature Coefficient

Single sideband, no blockers present,

0.016

dB/NC

2LO - 2RF Spur Rejection

2 x 2

68

dBc

63

3LO - 3RF Spur Rejection

3 x 3

77

dBc

67

RF Input Return Loss

LO and IF terminated into matched

impedance, LO “on”

15

dB

LO Input Return Loss

LO port selected, RF and IF terminated into

matched impedance

18

dB

LO port unselected, RF and IF terminated

into matched impedance

21

IF Output Return Loss

RF terminated into 50I, LO driven by

50I source, IF transformed to 50I using

external components shown in the Typical

Application Circuit

12.5

dB

RF-to-IF Isolation

31

dB

LO Leakage at RF Port

-49

dBm

2LO Leakage at RF Port

-40

dBm

LO Leakage at IF Port

-35

dBm

Channel Isolation

RFMAIN converted power measured at

IFDIV relative to IFMAIN, all unused ports

terminated to 50I

48

dB

RFDIV converted power measured at

IFMAIN relative to IFDIV, all unused ports

terminated to 50I

48

LO-to-LO Isolation

50

dB

LO Switching Time

50% of LOSEL to IF settled within 2 degrees

50

ns