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1N4148 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. 1N4148
Description  High-speed diodes
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Maker  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
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 3 page
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2004 Aug 10
3
NXP Semiconductors
Product data sheet
High-speed diodes
1N4148; 1N4448
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
100
V
VR
continuous reverse voltage
100
V
IF
continuous forward current
see Fig.2; note 1
200
mA
IFRM
repetitive peak forward current
450
mA
IFSM
non-repetitive peak forward current
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1
µs
4
A
t = 1 ms
1
A
t = 1 s
0.5
A
Ptot
total power dissipation
Tamb = 25 °C; note 1
500
mW
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
200
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VF
forward voltage
see Fig.3
1N4148
IF = 10 mA
1
V
1N4448
IF = 5 mA
0.62
0.72
V
IF = 100 mA
1
V
IR
reverse current
VR = 20 V; see Fig.5
25
nA
VR = 20 V; Tj = 150 °C; see Fig.5
50
µA
IR
reverse current; 1N4448
VR = 20 V; Tj = 100 °C; see Fig.5
3
µA
Cd
diode capacitance
f = 1 MHz; VR = 0 V; see Fig.6
4
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
4
ns
Vfr
forward recovery voltage
when switched from IF = 50 mA;
tr = 20 ns; see Fig.8
2.5
V
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-tp)
thermal resistance from junction to tie-point
lead length 10 mm
240
K/W
Rth(j-a)
thermal resistance from junction to ambient
lead length 10 mm; note 1
350
K/W




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