2PD2150 datasheet(1/13 Pages) NXP

Part #	2PD2150

Description	20 V, 3 A NPN low VCEsat (BISS) transistor

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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1.

Product proﬁle

1.1 General description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power

SOT89 (SC-62/TO-243) ﬂat lead Surface-Mounted Device (SMD) plastic package.

PNP complement: 2PB1424.

1.2 Features

I Low collector-emitter saturation voltage VCEsat

I High collector current capability IC and ICM

I High collector current gain (hFE) at high IC

I High efﬁciency due to less heat generation

I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

I DC-to-DC conversion

I MOSFET gate driving

I Motor control

I Charging circuits

I Power switches (e.g. motors, fans)

I Thin Film Transistor (TFT) backlight inverter

1.4 Quick reference data

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

2PD2150

20 V, 3 A NPN low VCEsat (BISS) transistor

Rev. 02 — 2 January 2007

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCEO

collector-emitter voltage

open base

-

20

V

IC

collector current

-

3

A

ICM

peak collector current

single pulse;

tp ≤ 1ms

--5

A

VCEsat

collector-emitter

saturation voltage

IC = 2 A; IB = 0.1 A

[1] -

0.2

0.5

V

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