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BZG03-C30 Datasheet(PDF) 3 Page - EIC discrete Semiconductors |
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BZG03-C30 Datasheet(HTML) 3 Page - EIC discrete Semiconductors |
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3 / 3 page  FIG.1 - Maximum total power dissipation as a FIG.2 - Maximum non-repetitive peak reverse function of temperature. power dissipation as a function of pulse duration (square pulse). 0 175 Solid line: tie-point temperature. Tj= 25 °C prior to surge. Dotted line: ambient temperature; device mounted on an Al2O3 PCB as shown in Fig.5. FIG. 3 - Forward current as a function of forward FIG.4 - Printed-circuit board for surface mounting. voltage; typical values. Dimensions in mm. Tj= 25 °C. Page 3 of 3 Rev. 08 : September 18, 2008 100 RATING AND CHARACTERISTIC CURVES ( BZG03-C10 ~ BZG03-C200 ) 3 2 1 Ptot (W) 3 0 104 1 0 4 1 0 2 PZSM (W) 103 102 10 10-2 10-1 110 tp (ms) T, (°C) 2 IF (A) VF (V) 50 50 4.5 □ 2.5 1.25 IATF 0060636 SGS TH07/1033 TW00/17276EM TH97/10561QM |
Similar Part No. - BZG03-C30 |
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Similar Description - BZG03-C30 |
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